Manufacturer Part Number
SPN02N60C3
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
N-Channel
TO-261-4, TO-261AA Package
Tape & Reel (TR) Packaging
Wide Operating Temperature Range: -55°C to 150°C (TJ)
High Drain to Source Voltage: 650V
Low On-Resistance: 2.5Ohm @ 1.1A, 10V
High Current Capability: 400mA (Ta)
Low Input Capacitance: 200pF @ 25V
Low Power Dissipation: 1.8W (Ta)
Low Gate Charge: 13nC @ 10V
Product Advantages
Reliable performance
Efficient power handling
Compact and space-saving design
Suitable for a wide range of applications
Key Technical Parameters
Manufacturer Part Number: SPN02N60C3
Drain to Source Voltage (Vdss): 650V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.1A, 10V
Current Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3.9V @ 80A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Quality and Safety Features
Robust and reliable design
Tested and certified for quality and safety
Compatibility
Suitable for a wide range of applications, including power supplies, motor drives, and switching circuits
Application Areas
Power electronics
Industrial automation
Consumer electronics
Automotive electronics
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and power handling capabilities
Compact and space-saving design
Wide operating temperature range
Reliable and robust performance
Suitable for a variety of applications