SPD30N06S2-15 - Infineon Technologies

Manufacturer Part Number

SPD30N06S2-15

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor for power applications

Product Features and Performance

Optimized for high-efficiency and high-power applications

Low on-resistance and fast switching characteristics

Robust design with high ruggedness and reliability

Suitable for switching frequencies up to 1 MHz

Product Advantages

Excellent thermal performance and power dissipation

Efficient heat dissipation through DPak (TO-252-3) package

Wide operating temperature range of -55°C to 175°C

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 55 V

Maximum Gate-to-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 14.7 mΩ @ 30 A, 10 V

Continuous Drain Current (Id): 30 A (at 25°C)

Input Capacitance (Ciss): 2070 pF @ 25 V

Power Dissipation (Tc): 136 W

Quality and Safety Features

RoHS non-compliant

Robust design for high reliability and ruggedness

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Switching power supplies

DC-DC converters

Motor drives

Amplifiers

Industrial and automotive electronics

Product Lifecycle

This is an active product, and no information on discontinuation or replacement is available.

Key Reasons to Choose This Product

Excellent thermal performance and power dissipation

Fast switching characteristics for high-efficiency applications

Robust and reliable design for demanding power electronics

Wide operating temperature range for diverse applications