Manufacturer Part Number
SPB80N06S2L-05
Manufacturer
Infineon Technologies
Introduction
High-performance MOSFET transistor designed for high-power, high-efficiency applications.
Product Features and Performance
N-channel MOSFET with low on-resistance and high current handling capability
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage rating of 55V
Very low gate-to-source voltage of ±20V
Extremely low on-resistance of 4.5mOhm at 80A and 10V gate drive
Product Advantages
Excellent power efficiency and thermal performance
High power density and reliability
Suitable for high-current, high-voltage applications
Key Technical Parameters
Continuous drain current (Id) of 80A at 25°C
Input capacitance (Ciss) of 7530pF at 25V
Power dissipation (Tc) of 300W
Gate charge (Qg) of 230nC at 10V
Quality and Safety Features
RoHS non-compliant
Meets industrial-grade temperature and reliability requirements
Compatibility
Compatible with a wide range of high-power, high-efficiency applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Active product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance for high-power applications
Reliable and robust design for industrial and automotive environments
Compatibility with a wide range of high-power, high-efficiency applications
Availability of replacement and upgrade options