SPB70N10L - Infineon Technologies

Manufacturer Part Number

SPB70N10L

Manufacturer

Infineon Technologies

Introduction

The SPB70N10L is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.

Product Features and Performance

100V drain-to-source voltage (Vdss)

±20V gate-to-source voltage (Vgs) rating

16mΩ maximum on-resistance (Rds(on)) at 50A and 10V

70A continuous drain current (ID) at 25°C

4,540pF maximum input capacitance (Ciss) at 25V

250W maximum power dissipation at 25°C

Product Advantages

Efficient power switching and control

High current handling capability

Low on-resistance for low power loss

Suitable for a wide range of power electronics applications

Key Technical Parameters

MOSFET technology

N-channel FET type

2V maximum gate threshold voltage (Vgs(th)) at 2mA

5V to 10V drive voltage range

240nC maximum gate charge (Qg) at 10V

Quality and Safety Features

RoHS non-compliant

Operating temperature range: -55°C to 175°C

Compatibility

TO-263-3 (D-Pak) surface mount package

Application Areas

Power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is an active and ongoing part of Infineon's SIPMOS series.

No information on impending discontinuation or replacement models.

Key Reasons to Choose

High current and voltage ratings for demanding power applications

Low on-resistance for efficient power conversion

Compact surface mount packaging for high-density designs

Wide operating temperature range for industrial and harsh environments