Manufacturer Part Number
SPB70N10L
Manufacturer
Infineon Technologies
Introduction
The SPB70N10L is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
100V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs) rating
16mΩ maximum on-resistance (Rds(on)) at 50A and 10V
70A continuous drain current (ID) at 25°C
4,540pF maximum input capacitance (Ciss) at 25V
250W maximum power dissipation at 25°C
Product Advantages
Efficient power switching and control
High current handling capability
Low on-resistance for low power loss
Suitable for a wide range of power electronics applications
Key Technical Parameters
MOSFET technology
N-channel FET type
2V maximum gate threshold voltage (Vgs(th)) at 2mA
5V to 10V drive voltage range
240nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS non-compliant
Operating temperature range: -55°C to 175°C
Compatibility
TO-263-3 (D-Pak) surface mount package
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active and ongoing part of Infineon's SIPMOS series.
No information on impending discontinuation or replacement models.
Key Reasons to Choose
High current and voltage ratings for demanding power applications
Low on-resistance for efficient power conversion
Compact surface mount packaging for high-density designs
Wide operating temperature range for industrial and harsh environments
SPB70N10L MOSCypress Semiconductor (Infineon Technologies)
SPB65P06INF