Manufacturer Part Number
SPA08N50C3
Manufacturer
Infineon Technologies
Introduction
The SPA08N50C3 is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.
Product Features and Performance
N-channel MOSFET transistor
560V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
On-resistance (Rds(on)) of 600mΩ at 4.6A and 10V
Continuous drain current (Id) of 7.6A at 25°C case temperature
Input capacitance (Ciss) of 750pF at 25V
Maximum power dissipation of 32W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 560V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ
Continuous Drain Current (Id): 7.6A
Input Capacitance (Ciss): 750pF
Power Dissipation: 32W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for various power conversion and control applications, such as in power supplies, motor drives, and inverters.
Application Areas
Power supplies
Motor drives
Inverters
Power conversion and control applications
Product Lifecycle
The SPA08N50C3 is an active product and not nearing discontinuation.
Replacement or upgraded products may be available in the future as technology evolves.
Key Reasons to Choose This Product
High voltage handling capability for a wide range of applications
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
RoHS3 compliance for environmental responsibility
Through-hole mounting for easy integration into existing designs