SMBT2907AE6327HTSA1 - Infineon Technologies

Manufacturer Part Number

SMBT2907AE6327HTSA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

ROHS3 Compliant

Surface Mount Packaging

Operating Temperature: 150°C (TJ)

Power Rating: 330 mW

Collector-Emitter Breakdown Voltage: 60 V

Collector Current: 600 mA

Collector Cutoff Current: 10 nA (ICBO)

Collector-Emitter Saturation Voltage: 1.6 V @ 50 mA, 500 mA

Transistor Type: PNP

DC Current Gain: 100 @ 150 mA, 10 V

Transition Frequency: 200 MHz

Product Advantages

Compact surface mount packaging

High power and voltage handling

Wide operating temperature range

High current and gain capabilities

Key Technical Parameters

Collector-Emitter Breakdown Voltage

Collector Current

Collector Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

Transition Frequency

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and applications that require a high-performance PNP bipolar junction transistor

Application Areas

Amplifiers

Switches

Drivers

Power supplies

Analog and digital circuits

Product Lifecycle

Currently in production

Replacements and upgrades may be available

Key Reasons to Choose This Product

Excellent power and voltage handling

High current and gain capabilities

Wide operating temperature range

Compact and efficient surface mount packaging

RoHS compliance for environmental responsibility