Manufacturer Part Number
SGP07N120XKSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
ROHS3 Compliant
NPT IGBT Type
Collector-Emitter Breakdown Voltage (Max): 1200 V
Collector Current (Max): 16.5 A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Gate Charge: 70 nC
Collector Pulsed Current (Icm): 27 A
Switching Energy: 1mJ
Turn-on/off Delay Time (Td) @ 25°C: 27ns/440ns
Product Advantages
High voltage and current handling capability
Low on-state voltage drop
Fast switching speed
Efficient power conversion
Key Technical Parameters
Package: TO-220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 125 W
Input Type: Standard
Mounting Type: Through Hole
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial controls
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose
High performance and reliability
Efficient power handling
Wide operating temperature range
Compact and easy to integrate design
SGP13N60UFDFSC