Manufacturer Part Number
SDT12S60
Manufacturer
Infineon Technologies
Introduction
High-performance silicon carbide (SiC) Schottky diode for power conversion applications
Product Features and Performance
Fast switching speed with zero reverse recovery time
Low forward voltage drop
High efficiency and low power loss
Wide operating temperature range from -55°C to 175°C
Product Advantages
Improved system efficiency and reduced cooling requirements
Compact design and simplified system architecture
Reliable and robust performance
Key Technical Parameters
Voltage: 600V DC reverse voltage
Current: 12A average rectified current
Capacitance: 450pF at 1V, 1MHz
Reverse recovery time: 0ns
Quality and Safety Features
Compliant with industry standards
Robust and reliable design for long-term operation
Compatibility
Suitable for a wide range of power conversion applications, such as power supplies, motor drives, and renewable energy systems
Application Areas
Industrial power electronics
Renewable energy systems
Electric vehicle power electronics
Home appliances and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Upgrade options and replacements may be available in the future as technology advances
Several Key Reasons to Choose This Product
Exceptional efficiency and low power loss due to fast switching and low forward voltage drop
Wide operating temperature range and robust design for reliable performance in demanding applications
Simplified system design and reduced cooling requirements, leading to compact and cost-effective solutions
Proven technology and compatibility with a wide range of power conversion applications