Manufacturer Part Number
SDP06S60
Manufacturer
Infineon Technologies
Introduction
This is a single silicon carbide (SiC) Schottky rectifier diode from Infineon Technologies.
Product Features and Performance
Reverse leakage current of 200 μA at 600 V
Forward voltage drop of 1.7 V at 6 A
Zero reverse recovery time
Operating temperature range of -55°C to 175°C
Capacitance of 300 pF at 0 V, 1 MHz
Product Advantages
Extremely fast switching speed with no reverse recovery time
High voltage and current handling capabilities
Excellent thermal performance
Compact TO-220-3 package
Key Technical Parameters
Reverse Voltage (Vr): 600 V
Forward Current (If): 6 A
Reverse Recovery Time (trr): 0 ns
Operating Temperature Range: -55°C to 175°C
Capacitance (Vr, f=1MHz): 300 pF
Quality and Safety Features
RoHS non-compliant
Housed in a PG-TO220-3-1 package
Compatibility
This diode is compatible with various electronic circuits and power supply applications that require a high-speed, high-voltage Schottky rectifier.
Application Areas
Power supplies
Power electronics
Industrial and consumer electronics
Switch-mode power supplies
Product Lifecycle
This product is an active and available part from Infineon Technologies. There are no indications of it being discontinued or reaching end-of-life.
Key Reasons to Choose This Product
Excellent high-speed switching performance with zero reverse recovery time
Ability to handle high voltages up to 600 V and high currents up to 6 A
Compact and thermally efficient TO-220-3 package
Wide operating temperature range of -55°C to 175°C
Reliable and proven Infineon Technologies quality and technology