Manufacturer Part Number
S29GL512T11TFIV10
Manufacturer
Infineon Technologies
Introduction
High-density, high-speed NAND flash memory suitable for a wide range of applications
Product Features and Performance
512Mbit memory capacity
64M x 8 memory organization
Parallel memory interface
FLASH - NOR technology
60ns write cycle time for word or page
110ns access time
Product Advantages
Large storage capacity
Fast write and read operations
Robust non-volatile storage
Extended temperature range for varied environments
Key Technical Parameters
Memory Size: 512Mbit
Memory Format: FLASH
Access Time: 110 ns
Write Cycle Time - Word, Page: 60ns
Voltage Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Durable design for industrial-grade applications
Reliable performance in extended temperature ranges
Compatibility
Supports parallel interface for efficient integration with existing systems
Mounting Type: Surface Mount
Application Areas
Embedded systems
Automotive electronics
Telecommunications
Industrial control systems
Consumer electronics
Product Lifecycle
Active product lifecycle status
Not indicated as nearing discontinuation
Several Key Reasons to Choose This Product
Capable of retaining data without power
Adaptable voltage supply range for varying power environments
High endurance for demanding applications
Ideal for memory-intensive operations
Wide operating temperature suitable for harsh conditions
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