Manufacturer Part Number
S29GL01GS11TFIV10
Manufacturer
Infineon Technologies
Introduction
High-capacity FLASH memory component for non-volatile memory solutions, supporting a wide range of electronic applications.
Product Features and Performance
1Gbit storage capacity
64M x 16 memory organization
Parallel memory interface
60ns write cycle time for word or page
110 ns access time
Supports voltage supply from 1.65V to 3.6V
Operates in temperature range from -40°C to 85°C
Surface mount 56-TFSOP package for PCB assembly
FLASH - NOR technology for reliable data retention
Product Advantages
High-density memory storage
Fast write and access operations
Wide voltage supply range for versatile use
Industrial temperature grade for extreme environments
Provided in a standard TSOP package for easy integration
Key Technical Parameters
Memory Size: 1Gbit
Memory Organization: 64M x 16
Write Cycle Time - Word, Page: 60ns
Access Time: 110 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Complies with industry standards for quality and reliability
Designed for safe operation within specified voltage and temperature ranges
Compatibility
Compatible with systems requiring parallel interface NOR FLASH memory
Universally mountable 56-TFSOP package
Application Areas
Embedded systems
Telecommunications
Automotive electronics
Industrial control systems
Gaming and entertainment devices
Product Lifecycle
Active product status
Currently not nearing discontinuation, with availability for future planning
Several Key Reasons to Choose This Product
Large memory capacity suited for sophisticated applications
High-speed performance enhances system responsiveness
Broad compatibility with various electronic systems and applications
Stable operation across a wide range of environmental conditions
Reliability backed by Infineon Technologies' stringent quality controls
Available and supported for sustainable supply chain management