ISC058N04NM5ATMA1 - Infineon Technologies

Manufacturer Part Number

ISC058N04NM5ATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel power MOSFET with excellent RDS(on) and high-frequency switching capabilities

Product Features and Performance

Optimized for high-frequency switching applications

Extremely low on-resistance (RDS(on)) for high efficiency

High avalanche energy capability

Extremely low input and output capacitance for fast switching

Suitable for high-current, high-voltage applications

Product Advantages

Excellent RDS(on) and switching performance

High power density and efficiency

Robust avalanche capability

Compact and thermally-efficient package

Key Technical Parameters

Drain-source voltage (VDS): 40V

Gate-source voltage (VGS): ±20V

On-resistance (RDS(on)): 5.8mΩ @ 31A, 10V

Continuous drain current (ID): 17A (Ta), 63A (Tc)

Input capacitance (Ciss): 1100pF @ 20V

Power dissipation: 3W (Ta), 42W (Tc)

Quality and Safety Features

RoHS3 compliant

Designed for reliable high-frequency operation

Robust avalanche capability for improved ruggedness

Compatibility

Compatible with a wide range of high-frequency, high-current applications

Application Areas

Switching power supplies

Motor drives

Industrial automation

Telecom power

Automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation

Replacement or upgraded products may become available in the future as technology advances

Key Reasons to Choose This Product

Excellent RDS(on) and switching performance for high efficiency

High power density and compact package

Robust avalanche capability for improved reliability

Suitable for a wide range of high-frequency, high-current applications