Manufacturer Part Number
IRS4426STRPBF
Manufacturer
Infineon Technologies
Introduction
The IRS4426STRPBF is a low-side gate driver designed for IGBT and N-Channel MOSFET applications, ensuring efficient power management.
Product Features and Performance
Independent channel configuration for flexible usage
Capable of driving IGBT and N-Channel MOSFET gates
Supply voltage range from 6V to 20V
Dual output with source current of 2.3A and sink current of 3.3A
Quick rise and fall times of approximately 25ns
Operates efficiently across a wide temperature range from -40°C to 150°C
Product Advantages
The independent channel feature allows control of two gates independently
High sink and source current suitable for high power applications
Robust thermal performance suited for high-temperature environments
Key Technical Parameters
Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Voltage Supply: 6V ~ 20V
Logic Voltage VIL, VIH: 0.8V, 2.5V
Current Peak Output (Source, Sink): 2.3A, 3.3A
Rise / Fall Time: 25ns
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Quality and Safety Features
Surface mount technology ensures reliability and durability under various environmental conditions.
Compatibility
Compatible with a variety of IGBT and N-Channel MOSFETs, allowing for versatile applications in power management.
Application Areas
Motor Drives
Power Supply Systems
Renewable Energy Systems
Heavy Electrical Systems
Product Lifecycle
Currently in active production with no near-term discontinuation expected. Future upgrades and replacement options will be available as technology advances.
Several Key Reasons to Choose This Product
High current capability enhances performance in high-power applications.
Fast switching capabilities with 25ns rise/fall time improve efficiency.
Dual independent channels offer design flexibility.
Wide operating temperature range ensures reliability in extreme conditions.
Manufactured by a reputable semiconductor leader, Infineon Technologies.