Manufacturer Part Number
IRS2334MTRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance 3-phase gate driver for IGBTs and N-Channel MOSFETs
Product Features and Performance
3-phase driver
6 independent high-power channels
Drives IGBT and N-Channel MOSFET gates
Supply voltage between 10V and 20V
Logic input thresholds: VIL 0.8V, VIH 2.5V
Peak output current: 200mA source, 350mA sink
Non-inverting input type
High side voltage up to 600V for bootstrap circuits
Rise time typically 125ns, fall time typically 50ns
Operating temperature range from -40°C to 150°C
Surface mount 28-VFQFN exposed pad package
Integrated dead-time and shoot-through protection
Product Advantages
Robust design suitable for tough environmental conditions
Enhanced thermal performance with exposed pad package
Built-in bootstrap diode function reduces external component count
Advanced input logic prevents false triggering
Compatible with 3-phase motor drive applications
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Current - Peak Output: 200mA Source, 350mA Sink
Quality and Safety Features
Over-temperature protection
Overcurrent protection
Under-voltage lockout (UVLO)
Compatibility
Suitable for 3-phase applications
Compatible with multiple types of high power transistors (IGBTs and N-Channel MOSFETs)
Application Areas
Motor drives
Inverters
Power converters
Electric vehicle powertrain systems
Renewable energy systems
High-power switching applications
Product Lifecycle
Product Status: Active
Not nearing discontinuation
Availability of replacements or upgrades not specified
Key Reasons to Choose This Product
High-efficiency 3-phase driving capability
Supports a wide range of high-power applications
Durable and reliable in extreme temperature ranges
Minimizes external components for space-saving design
Enhanced protective features ensure long-term reliability
Infineon's reputation for quality power management devices