Manufacturer Part Number
IRS2308STRPBF
Manufacturer
Infineon Technologies
Introduction
Power Management ICs for efficient gate driving applications
Product Features and Performance
Highly efficient half-bridge driver
Independent channel operation
Suitable for driving IGBTs and N-Channel MOSFETs
Robust 600V maximum high-side voltage
Fast switching with 100ns rise time and 35ns fall time
Reliable operating temperature range of -40°C to 150°C
Product Advantages
Dual independent channels enhance design flexibility
High current drive capability with 290mA source and 600mA sink
Integrated under-voltage lockout for both channels
CMOS compatible inputs optimize interface with control logic
Key Technical Parameters
Supply Voltage: 10V to 20V
Output Current: 290mA source, 600mA sink
Input Logic Levels: VIL 0.8V, VIH 2.5V
Rise/Fall Time: 100ns/35ns
High-Side Voltage (Bootstrap): Up to 600V
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
Under-voltage lockout for safe operation
Designed to prevent cross-conduction and shoot-through
Over-temperature protection
Compatibility
Compatible with various IGBTs and N-Channel MOSFETs
Suitable for half-bridge topologies in power applications
Application Areas
Motor drives and controls
Inverters for renewable energy systems
Switch Mode Power Supplies (SMPS)
High-efficiency power conversion systems
Product Lifecycle
Status: Active
Not nearing discontinuation
Availability of replacements or upgrades upon market demand
Several Key Reasons to Choose This Product
High integration simplifies circuit design
Excellent performance-to-cost ratio
Proven Infineon Technologies reliability and quality
Adaptable to a wide range of power applications
Enhanced thermal performance for high-reliability systems
Supports complex power management tasks with ease
IRS2330SIR
IRS2304PBFInfineon TechnologiesIC GATE DRVR HALF-BRIDGE 8DIP