Manufacturer Part Number
IRS21091STRPBF
Manufacturer
Infineon Technologies
Introduction
Integrated Circuit (IC) designed for gate driver applications
Product Features and Performance
2-channel synchronous gate driver
Capable of driving IGBT and N-Channel MOSFET devices
Operating voltage range of 10V to 20V
Peak output current of 290mA sourcing and 600mA sinking
Fast rise and fall times of 100ns and 35ns respectively
High-side voltage capability up to 600V (bootstrap)
Operating temperature range of -40°C to 150°C
Product Advantages
Efficient gate driving for power conversion applications
Compact 8-SOIC surface mount package
Robust performance across wide temperature range
Key Technical Parameters
Supply voltage: 10V to 20V
Number of drivers: 2
Logic voltage levels: 0.8V (VIL), 2.5V (VIH)
Driven configuration: Half-bridge
Gate type: IGBT, N-Channel MOSFET
Rise/fall time: 100ns/35ns
Peak output current: 290mA source, 600mA sink
High-side voltage max: 600V (bootstrap)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability power electronics applications
Compatibility
Compatible with a wide range of IGBT and MOSFET devices
Application Areas
Power conversion systems
Motor drives
Inverters
Switching power supplies
Product Lifecycle
This product is an active, in-production part from Infineon Technologies.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Efficient and reliable gate driving for power electronics
Wide operating voltage and temperature range
Fast switching capabilities
Compact surface mount package
RoHS3 compliance for environmental sustainability