IRS2008SPBF - Infineon Technologies

Manufacturer Part Number

IRS2008SPBF

Manufacturer

Infineon Technologies

Introduction

IRS2008SPBF is a high-performance, half-bridge gate driver designed for efficient power management and delivery, suitable for synchronous N-Channel MOSFETs.

Product Features and Performance

Synchronous driving of N-Channel MOSFETs

Supports half-bridge configuration

Dual driver channels

Peak output currents of 290mA source and 600mA sink

High side voltage up to 200V (Bootstrap)

Fast rise and fall times of 70ns and 30ns respectively

Wide operating temperature range from -40°C to 150°C

Product Advantages

High peak output current capability enhances driving power

Fast switching times improve performance in high-frequency applications

Robust temperature range ensures reliability across diverse environments

Key Technical Parameters

Supply Voltage: 10V to 20V

Logic Voltage - VIL, VIH: 0.8V, 2.5V

Peak Output Current: 290mA (Source), 600mA (Sink)

High Side Voltage - Max (Bootstrap): 200V

Rise/Fall Time: 70ns/30ns

Operating Temperature: -40°C to 150°C

Quality and Safety Features

Designed to handle high bootstrap voltages up to 200V safely

Operational over a wide temperature range ensuring stability and reliability

Compatibility

Optimized for synchronous N-Channel MOSFET configurations in half-bridge setups

Application Areas

Suitable for complex motor drives, inverters, and switching power supplies where efficient power management is critical

Product Lifecycle

Status: Obsolete with consideration for replacements or upgrades necessary

Several Key Reasons to Choose This Product

Robust driving capability suitable for high-performance applications

Supports efficient power management in critical high voltage settings

Fast switching characteristics ideal for high-frequency uses

Reliable operation across a wide range of operating temperatures

Proven performance in power conversion and management applications