Manufacturer Part Number
IRLS3036TRLPBF
Manufacturer
Infineon Technologies
Introduction
This product is a single N-channel MOSFET transistor from Infineon Technologies' HEXFET series, designed for high-power switching applications.
Product Features and Performance
High-current capability up to 195A continuous drain current at 25°C
Low on-state resistance (RDS(on)) of 2.4 mΩ at 165A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 11210 pF at 50V
High power dissipation up to 380W at 25°C
Product Advantages
Excellent efficiency due to low on-state resistance
Reliable high-temperature operation
Suitable for high-power, high-current switching applications
Key Technical Parameters
60V drain-source voltage (VDS)
±16V gate-source voltage (VGS)
5V gate threshold voltage (VGS(th)) at 250A
140nC maximum gate charge (Qg) at 4.5V
Quality and Safety Features
RoHS3 compliant
D2PAK surface mount package
Compatibility
This MOSFET is compatible with a wide range of high-power switching applications, including power supplies, motor drives, and industrial controls.
Application Areas
High-power switching
Power supplies
Motor drives
Industrial controls
Product Lifecycle
This product is an active and widely used part in Infineon's HEXFET series. Replacements and upgrades are readily available.
Key Reasons to Choose This Product
High-current, high-power handling capability
Excellent efficiency with low on-state resistance
Reliable high-temperature operation
Compact and easy to integrate D2PAK surface mount package
Wide availability and active product lifecycle