Manufacturer Part Number
IRLR3105TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for power switching and control applications
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
Low on-resistance (RDS(on)) of 37 mΩ at 15 A, 10 V
High drain-to-source voltage (VDS) of 55 V
Low input capacitance (Ciss) of 710 pF at 25 V
Low gate charge (Qg) of 20 nC at 5 V
Suitable for high-frequency switching applications
Product Advantages
Excellent thermal and electrical performance
Efficient power conversion and control
Reliable and durable construction
Key Technical Parameters
Drain-to-Source Voltage (VDS): 55 V
Gate-to-Source Voltage (VGS): ±16 V
Continuous Drain Current (ID) at 25°C: 25 A
Power Dissipation (PD) at 25°C: 57 W
ON-State Resistance (RDS(on)): 37 mΩ at 15 A, 10 V
Quality and Safety Features
Compliant with RoHS 3 directive
Robust and reliable design for industrial applications
Provides overcurrent and overvoltage protection
Compatibility
Suitable for a wide range of power electronics and control systems
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation and control
Electric vehicle propulsion systems
Product Lifecycle
Currently available and in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses
Excellent thermal management and reliability
Versatile and suitable for various power applications
Cost-effective solution for power switching and control
Compliance with industry standards and regulations