Manufacturer Part Number
IRLR2705TRLPBF
Manufacturer
Infineon Technologies
Introduction
The IRLR2705TRLPBF is a high-performance N-channel power MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for a wide range of power switching applications.
Product Features and Performance
N-channel MOSFET transistor
Drain to source voltage (Vdss) of 55V
Maximum gate-source voltage (Vgs) of ±16V
On-resistance (Rds(on)) of 40mΩ at 17A and 10V
Continuous drain current (Id) of 28A at 25°C
Input capacitance (Ciss) of 880pF at 25V
Power dissipation (Pd) of 68W at 25°C
Operating temperature range of -55°C to 175°C
Product Advantages
Excellent on-state resistance for low conduction losses
High drain current capability for efficient power switching
Wide operating temperature range
Suitable for various power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Gate to Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 40mΩ @ 17A, 10V
Continuous Drain Current (Id): 28A @ 25°C
Input Capacitance (Ciss): 880pF @ 25V
Power Dissipation (Pd): 68W @ 25°C
Quality and Safety Features
RoHS3 compliant
D-Pak (TO-252-3) surface-mount package
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent on-state performance for efficient power switching
High drain current capability for demanding applications
Wide operating temperature range for versatile use
Compact and reliable D-Pak surface-mount package
RoHS3 compliance for environmentally-friendly applications
IRLR2705IR