Manufacturer Part Number
IRLMS2002TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRLMS2002TRPBF is a single N-channel MOSFET transistor from Infineon's HEXFET series, designed for a variety of power management and switching applications.
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±12V Gate-Source Voltage (Vgs)
30mΩ On-Resistance (Rds(on)) at 6.5A, 4.5V
5A Continuous Drain Current (Id) at 25°C
1310pF Input Capacitance (Ciss) at 15V
2W Power Dissipation (Pd) at 25°C
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact SOT-23-6 surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Vgs(th) (Max): 1.2V at 250A
Drive Voltage (Max Rds(on), Min Rds(on)): 2.5V, 4.5V
Gate Charge (Qg) (Max): 22nC at 5V
Quality and Safety Features
RoHS3 compliant
-55°C to 150°C operating temperature range
Compatibility
Surface mount (SMD) package suitable for automated assembly
Application Areas
Power management
Switching applications
Motor control
DC-DC conversion
Product Lifecycle
The IRLMS2002TRPBF is an active product. No information on pending discontinuation or availability of replacements or upgrades.
Key Reasons to Choose This Product
Low on-resistance for efficient power switching
High current handling capability
Compact surface mount package for space-constrained designs
Broad operating temperature range
RoHS3 compliance for environmental sustainability
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