Manufacturer Part Number
IRLML2502TR
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
20V Drain-Source Voltage (Vdss)
45mΩ Maximum On-Resistance (Rds(on)) at 4.2A, 4.5V
2A Continuous Drain Current (Id) at 25°C
740pF Maximum Input Capacitance (Ciss) at 15V
2V Maximum Gate-Source Threshold Voltage (Vgs(th)) at 250μA
12nC Maximum Gate Charge (Qg) at 5V
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Compact surface-mount package
Key Technical Parameters
N-Channel MOSFET
Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) Technology
TO-236-3, SC-59, SOT-23-3 Package
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Power conversion and control circuits
Switching power supplies
Motor drives
Automotive electronics
Product Lifecycle
Mature product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose
Robust performance in high-current, high-efficiency applications
Compact and space-saving surface-mount package
Reliable and proven technology from Infineon