Manufacturer Part Number
IRLHM620TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRLHM620TRPBF is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for a variety of power management and switching applications.
Product Features and Performance
Low on-resistance of 2.5 mΩ @ 20 A, 4.5 V
High continuous drain current of 26 A (at 25°C ambient temperature) and 40 A (at 25°C case temperature)
Low input capacitance of 3620 pF @ 10 V
Wide operating temperature range of -55°C to 150°C
Supports a gate-to-source voltage range of ±12 V
Maximum power dissipation of 2.7 W (at 25°C ambient temperature) and 37 W (at 25°C case temperature)
Product Advantages
Excellent efficiency and thermal performance
Compact PQFN (3x3) package for high power density
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Threshold Voltage (Vgs(th)): 1.1 V @ 50 A
Gate Charge (Qg): 78 nC @ 4.5 V
Drain-to-Source On-Resistance (Rds(on)): 2.5 mΩ @ 20 A, 4.5 V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
The IRLHM620TRPBF is compatible with a wide range of power management and switching applications, including:
DC-DC converters
Motor drives
Power supplies
Inverters
Power amplifiers
Application Areas
Power management
Switching applications
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
The IRLHM620TRPBF is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact PQFN (3x3) package for high power density
Wide operating temperature range of -55°C to 150°C
Supports a gate-to-source voltage range of ±12 V
Suitable for a wide range of power management and switching applications
