Manufacturer Part Number
IRL80HS120
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
6-PQFN (2x2) (DFN2020) package
Surface Mount
Operating Temperature: -55°C to 175°C
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 32 mOhm @ 7.5 A, 10 V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id) @ 25°C: 12.5 A
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Power Dissipation (Max): 11.5 W
N-Channel FET Type
Vgs(th) (Max) @ Id: 2 V @ 10 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Product Advantages
High power handling capacity
Low on-resistance
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 80 V
Continuous Drain Current (Id): 12.5 A
On-resistance (Rds(on)): 32 mOhm
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface mount devices
Application Areas
High-power switching applications
Power supplies
Motor drives
Industrial controls
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High power handling capacity
Low on-resistance
Wide operating temperature range
Compact surface mount package
ROHS3 compliant