Manufacturer Part Number
IRL60S216
Manufacturer
Infineon Technologies
Introduction
The IRL60S216 is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET and StrongIRFET series, designed for a wide range of power conversion and control applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 1.95 mΩ at 100A, 10V
High continuous drain current (ID) of 195A at 25°C
Wide operating temperature range of -55°C to 175°C
High power dissipation capability of 375W at TC
Fast switching speeds and low gate charge (Qg) of 255 nC at 4.5V
Robust design with high drain-source voltage (VDS) of 60V
Product Advantages
Excellent efficiency and low power losses
High current handling capability
Wide temperature range for versatile applications
Fast and reliable switching performance
Compact and thermally efficient package design
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 1.95 mΩ @ 100A, 10V
Drain Current (ID): 195A @ 25°C
Input Capacitance (Ciss): 15,330 pF @ 25V
Gate Charge (Qg): 255 nC @ 4.5V
Quality and Safety Features
ROHS3 compliant
Durable and reliable construction
Thermally efficient package design
Compatibility
The IRL60S216 is compatible with a wide range of power electronics and control systems, making it suitable for various applications.
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Electric vehicle (EV) and hybrid electric vehicle (HEV) systems
Industrial automation and control
Lighting and appliance control
Product Lifecycle
The IRL60S216 is an active product and not nearing discontinuation. Replacements and upgrades may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent efficiency and low power losses for improved system performance
High current handling capability for demanding applications
Wide operating temperature range for versatile use in different environments
Fast and reliable switching performance for high-speed power conversion
Compact and thermally efficient package design for space-constrained applications