Manufacturer Part Number
IRL3713PBF
Manufacturer
Infineon Technologies
Introduction
The IRL3713PBF is a high-performance N-Channel MOSFET transistor in a TO-220AB package, part of Infineon's HEXFET series.
Product Features and Performance
High current capability up to 260A continuous at 25°C
Low on-resistance of 3mΩ at 38A, 10V
Wide operating temperature range of -55°C to 175°C
High input capacitance of 5890pF at 15V
Maximum power dissipation of 330W at 25°C
Product Advantages
Excellent thermal efficiency and power handling
Robust design for high-current applications
Efficient switching performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 2.5V at 250A
Drive Voltage (Min Rds On, Max Rds On): 4.5V, 10V
Gate Charge (Qg): 110nC at 4.5V
Quality and Safety Features
Through-hole mounting for reliable connections
Rugged TO-220AB package for industrial applications
Stringent quality control and testing
Compatibility
Compatible with various high-power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
The IRL3713PBF is an active product and is not near discontinuation.
Replacement and upgrade options may be available from Infineon.
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide temperature range and robust design for industrial applications
Proven reliability and performance in Infineon's HEXFET series
Compatibility with a variety of high-power electronic systems
IRL3714LPBFInfineon TechnologiesMOSFET N-CH 20V 36A TO262