IRGS10B60KDTRRP - Infineon Technologies

Manufacturer Part Number

IRGS10B60KDTRRP

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistor IGBT Single

Product Features and Performance

RoHS3 Compliant

D2PAK Package

-55°C ~ 150°C Operating Temperature

156W Max Power

NPT IGBT Type

600V Max Collector-Emitter Breakdown Voltage

22A Max Collector Current

2V Vce(on) @ 15V, 10A

90ns Reverse Recovery Time

38nC Gate Charge

44A Max Pulsed Collector Current

140μJ Turn-on, 250μJ Turn-off Switching Energy

30ns Turn-on, 230ns Turn-off Delay Time

Product Advantages

High Power Handling Capability

Fast Switching Speed

Low On-state Voltage Drop

Compact D2PAK Package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 22A

Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A

Reverse Recovery Time (trr): 90ns

Gate Charge: 38nC

Current Collector Pulsed (Icm): 44A

Switching Energy: 140μJ (on), 250μJ (off)

Td (on/off) @ 25°C: 30ns/230ns

Quality and Safety Features

RoHS3 Compliant

Wide Operating Temperature Range (-55°C ~ 150°C)

Compatibility

Surface Mount Mounting Type

Application Areas

Power Supplies

Motor Drives

Inverters

Converters

Product Lifecycle

No information on discontinuation or replacement

Key Reasons to Choose This Product

High power handling capability up to 156W

Fast switching speed with 30ns turn-on and 230ns turn-off delay time

Low on-state voltage drop of 2.2V @ 15V, 10A

Compact D2PAK package for space-limited applications

Wide operating temperature range of -55°C to 150°C