Manufacturer Part Number
IRGPS4067DPBF
Manufacturer
Infineon Technologies
Introduction
High-power IGBT transistor for industrial applications
Product Features and Performance
Trench IGBT technology
600V collector-emitter breakdown voltage
240A maximum collector current
750W maximum power rating
05V maximum collector-emitter saturation voltage
130ns reverse recovery time
240nC gate charge
360A maximum pulsed collector current
75mJ turn-on, 3.43mJ turn-off switching energy
80ns turn-on, 190ns turn-off delay times
Product Advantages
High power density
Low conduction and switching losses
Robust design for industrial applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 240A
Collector-Emitter Saturation Voltage: 2.05V
Reverse Recovery Time: 130ns
Gate Charge: 240nC
Pulsed Collector Current: 360A
Switching Energy: 5.75mJ (on), 3.43mJ (off)
Delay Times: 80ns (on), 190ns (off)
Quality and Safety Features
Operating temperature range: -55°C to 175°C
Through-hole mounting
SUPER-247 (TO-274AA) package
Compatibility
Suitable for industrial applications such as motor drives, power supplies, and power conversion systems
Application Areas
Industrial motor drives
Power supplies
Power conversion systems
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Several Key Reasons to Choose This Product
High power density and efficiency due to trench IGBT technology
Robust design for industrial applications with wide operating temperature range
Low conduction and switching losses for improved system performance
Comprehensive technical parameters for reliable system design
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