Manufacturer Part Number
IRGP20B60PDPBF
Manufacturer
Infineon Technologies
Introduction
High-power IGBT transistor with fast switching and low conduction losses
Product Features and Performance
600V IGBT with low conduction losses
Fast switching with short turn-on and turn-off times
High current capability up to 40A continuous, 80A pulsed
Low gate charge of 68nC for efficient driver design
Wide operating temperature range of -55°C to 150°C
Product Advantages
Improved energy efficiency through low conduction and switching losses
Compact design enabled by high power density
Reliable operation in high-power applications
Key Technical Parameters
Collector-Emitter Voltage: 600V
Collector Current (Continuous): 40A
Collector Current (Pulsed): 80A
On-State Voltage Drop (Vce(on)): 2.8V @ 15V, 20A
Reverse Recovery Time (trr): 42ns
Gate Charge (Qg): 68nC
Quality and Safety Features
RoHS3 compliant
TO-247AC package for reliable thermal performance
Designed for high reliability in industrial applications
Compatibility
Suitable for use in various high-power applications such as motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Power inverters and converters
Uninterruptible power supplies (UPS)
Welding equipment
Other high-power electronic systems
Product Lifecycle
This product is currently in active production and widely available. No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
High efficiency and low losses through advanced IGBT technology
Reliable and robust operation in demanding industrial environments
Compact and easy-to-integrate design with high power density
Extensive application versatility across various high-power electronics
Proven performance and long-term availability from a reputable manufacturer
IRGNIN100M12IRIGBT Module