Manufacturer Part Number
IRGIB7B60KDPBF
Manufacturer
Infineon Technologies
Introduction
This is a high-performance Insulated-Gate Bipolar Transistor (IGBT) from Infineon Technologies.
Product Features and Performance
NPT IGBT structure
Voltage rating of 600V
Continuous collector current of 12A
Low on-state voltage of 2.2V at 15V gate voltage and 8A collector current
Fast reverse recovery time of 95ns
Gate charge of 29nC
Pulsed collector current of 24A
Switching energy of 160μJ (on) and 160μJ (off)
Turn-on and turn-off delays of 23ns and 140ns respectively
Product Advantages
Excellent switching performance
High power density
Reliable operation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 12A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Reverse Recovery Time (trr): 95ns
Gate Charge: 29nC
Current Collector Pulsed (Icm): 24A
Switching Energy: 160μJ (on), 160μJ (off)
Td (on/off) @ 25°C: 23ns/140ns
Quality and Safety Features
Meets RoHS requirements
Reliable operation within the specified temperature range of -55°C to 175°C
Compatibility
This IGBT is compatible with a wide range of power electronic applications.
Application Areas
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Switched-mode power supplies (SMPS)
Product Lifecycle
This IGBT is an active product from Infineon Technologies and is not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent switching performance for high-efficiency power conversion
High power density for compact design
Reliable operation across a wide temperature range
Compatibility with a variety of power electronic applications
