Manufacturer Part Number
IRGB4062DPBF
Manufacturer
Infineon Technologies
Introduction
High-performance trench insulated-gate bipolar transistor (IGBT) designed for power electronics applications.
Product Features and Performance
Optimized for high-frequency and high-power applications
Trench IGBT technology for low on-state voltage and fast switching
Wide operating temperature range of -55°C to 175°C
High power handling capability up to 250W
Low collector-emitter saturation voltage (Vce(on)) of 1.95V at 24A
Fast switching with turn-on and turn-off times of 41ns and 104ns, respectively
Low gate charge of 50nC for efficient switching
Reverse recovery time (trr) of 89ns for reduced switching losses
Product Advantages
Excellent power handling and efficiency for high-power applications
Fast switching performance for high-frequency operation
Robust and reliable design for demanding environments
Key Technical Parameters
Collector-Emitter Voltage (VCES): 600V
Collector Current (IC): 48A continuous, 72A pulsed
On-State Voltage (VCE(on)): 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89ns
Gate Charge (Qg): 50nC
Quality and Safety Features
RoHS3 compliant
TO-220AB package for reliable mounting and heat dissipation
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, inverters, and power supplies.
Application Areas
Industrial motor drives
Power inverters and converters
Uninterruptible power supplies (UPS)
Welding equipment
Home appliances
Product Lifecycle
This product is actively in production and widely available.
Replacements and upgrades may be available from Infineon or other suppliers.
Several Key Reasons to Choose This Product
Excellent power handling and efficiency for high-power applications
Fast switching performance for high-frequency operation
Robust and reliable design for demanding environments
Wide operating temperature range and RoHS3 compliance for versatile applications
Proven track record and support from a reputable manufacturer, Infineon Technologies.