Manufacturer Part Number
IRGB30B60KPBF
Manufacturer
Infineon Technologies
Introduction
High-power single IGBT transistor suitable for various power conversion applications
Product Features and Performance
N-channel non-punch-through (NPT) IGBT technology
Optimized for high power and efficiency
Low on-state voltage drop
Fast switching speed
Robust and reliable design
Product Advantages
High power handling capability up to 370W
Low conduction and switching losses
Wide operating temperature range from -55°C to 175°C
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 600V
Collector Current (max): 78A
Collector-Emitter Saturation Voltage (max): 2.35V
Gate Charge: 102nC
Switching Times (on/off): 46ns/185ns
Quality and Safety Features
RoHS compliant (exemptions may apply)
Suitable for high-reliability industrial applications
Compatibility
Compatible with various power electronic circuits and systems
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Industrial equipment
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and efficiency
Fast switching performance
Reliable and robust design
Suitability for a wide range of power electronics applications
IRGB30V60DFSTMicroelectronics