Manufacturer Part Number
IRG4PSH71UD
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor IGBT (Insulated Gate Bipolar Transistor) single.
Product Features and Performance
Supports high power applications up to 350W
High voltage capability of up to 1200V collector-emitter breakdown voltage
High current capacity of up to 99A collector current (max)
Low voltage drop of 2.7V at 15V gate voltage and 70A collector current
Fast switching with 110ns reverse recovery time
380nC gate charge
Product Advantages
Suitable for high power, high voltage, and high current applications
Fast switching capability for efficient power conversion
Low on-state voltage drop for reduced power losses
Key Technical Parameters
Collector-emitter breakdown voltage: 1200V
Collector current (max): 99A
On-state voltage drop: 2.7V @ 15V, 70A
Reverse recovery time: 110ns
Gate charge: 380nC
Quality and Safety Features
RoHS non-compliant
Operating temperature range: -55°C to 150°C
Compatibility
Package: TO-274AA (SUPER-247)
Mounting type: Through-hole
Application Areas
High power industrial applications
Power conversion systems
Motor drives
Inverters
Welding equipment
Product Lifecycle
This product is an active and available part from Infineon Technologies.
Key Reasons to Choose This Product
High power handling capability up to 350W
Excellent voltage and current rating for demanding applications
Fast switching performance for efficient power conversion
Low on-state voltage drop for reduced power losses
Robust design for reliable operation across wide temperature range
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