Manufacturer Part Number
IRG4PH50UDPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
RoHS3 Compliant
TO-247AC package
Operating Temperature: -55°C to 150°C (TJ)
Power Rating: 200W
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 45A
Collector-Emitter Saturation Voltage: 3.7V @ 15V, 24A
Reverse Recovery Time: 90ns
Gate Charge: 160nC
Pulsed Collector Current: 180A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Turn-on/Turn-off Delay: 47ns/110ns
Product Advantages
High power handling capability
Fast switching performance
Low conduction losses
Robust design for industrial applications
Key Technical Parameters
Voltage Rating: 1200V
Current Rating: 45A
Switching Characteristics
Quality and Safety Features
RoHS3 compliant
Designed for industrial and power conversion applications
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Industrial motor drives
Power converters
Welding equipment
Uninterruptible Power Supplies (UPS)
Induction heating
Renewable energy systems
Product Lifecycle
Currently available product
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose
High power handling and efficiency
Fast, reliable switching performance
Robust design for industrial environments
RoHS3 compliance for environmental responsibility