Manufacturer Part Number
IRG4PH50SPBF
Manufacturer
Infineon Technologies
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) device
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High power rating: 200W
High voltage capability: 1200V collector-emitter breakdown voltage
High current capability: 57A continuous collector current, 114A pulsed collector current
Low on-state voltage: 1.7V @ 15V, 33A
Fast switching speed: 32ns turn-on, 845ns turn-off
Product Advantages
Reliable and robust design
Efficient power conversion
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Continuous): 57A
Collector Current (Pulsed): 114A
On-State Voltage: 1.7V @ 15V, 33A
Gate Charge: 167nC
Switching Energy: 1.8mJ (on), 19.6mJ (off)
Switching Times: 32ns (turn-on), 845ns (turn-off)
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Compatibility
Through-hole mounting in TO-247AC package
Application Areas
Servo drives
Uninterruptible power supplies (UPS)
Welding equipment
Motor control
Power supplies
Induction heating
Inductive loads
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Infineon
Several Key Reasons to Choose This Product
Robust and reliable performance
High power and voltage handling capabilities
Fast switching speeds for efficient power conversion
Suitable for a wide range of high-power industrial and automotive applications
RoHS3 compliance for environmental considerations
Proven track record and support from Infineon Technologies