Manufacturer Part Number
IRG4PC40UDPBF
Manufacturer
Infineon Technologies
Introduction
High-power IGBT transistor for industrial applications
Product Features and Performance
Optimized for fast switching and low conduction losses
High power density
Wide operating temperature range of -55°C to 150°C (junction temperature)
High collector-emitter breakdown voltage of 600V
High collector current rating of 40A continuous, 160A pulsed
Low on-state voltage of 2.1V at 20A, 15V gate voltage
Fast switching with turn-on time of 54ns and turn-off time of 110ns
Product Advantages
Efficient power conversion
Reliable operation in harsh environments
Compact design
Key Technical Parameters
Power rating: 160W
Collector-emitter breakdown voltage: 600V
Collector current: 40A continuous, 160A pulsed
On-state voltage: 2.1V at 20A, 15V gate voltage
Reverse recovery time: 42ns
Gate charge: 100nC
Switching energy: 710μJ (on), 350μJ (off)
Quality and Safety Features
RoHS3 compliant
TO-247AC package for secure mounting and heat dissipation
Compatibility
Standard IGBT input type
Through-hole mounting
Application Areas
Industrial motor drives
Power inverters and converters
Induction heating
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in production and availability is good.
Replacement or upgraded models may be available in the future as technology advances.
Key Reasons to Choose This Product
High power density and efficient power conversion for compact, high-performance designs
Wide operating temperature range for reliable operation in harsh environments
Fast switching and low conduction losses for improved system efficiency
Robust construction and safety features for industrial applications
IRG4PC40KD-E206IR