Manufacturer Part Number
IRFZ34NSTRLPBF
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor component, specifically a single N-channel MOSFET transistor.
Product Features and Performance
Operates in the temperature range of -55°C to 175°C (junction temperature)
Capable of handling a continuous drain current of 29A at 25°C (case temperature)
Has a maximum drain-to-source voltage of 55V
Features a low on-state resistance of 40mΩ (maximum) at 16A, 10V
Offers a maximum gate-to-source voltage of ±20V
Provides an input capacitance of 700pF (maximum) at 25V drain-to-source voltage
Supports a maximum power dissipation of 3.8W (at ambient temperature) and 68W (at case temperature)
Product Advantages
High current handling capability
Low on-state resistance for improved efficiency
Wide temperature operating range
Suitable for various power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 40mΩ (maximum) at 16A, 10V
Continuous Drain Current (Id): 29A at 25°C (case temperature)
Input Capacitance (Ciss): 700pF (maximum) at 25V
Power Dissipation: 3.8W (at ambient temperature), 68W (at case temperature)
Quality and Safety Features
RoHS3 compliant
MOSFET technology for reliable operation
Compatibility
Suitable for various power electronics applications, such as motor drives, power supplies, and switching circuits
Application Areas
Power electronics
Motor drives
Power supplies
Switching circuits
Product Lifecycle
This product is an active and available part from Infineon Technologies.
Several Key Reasons to Choose This Product
High current handling capability for power-intensive applications
Low on-state resistance for improved efficiency
Wide temperature operating range for versatile usage
Reliable MOSFET technology for dependable performance
RoHS3 compliance for environmentally conscious designs