Manufacturer Part Number
IRFZ24NPBF
Manufacturer
Infineon Technologies
Introduction
N-Channel Power MOSFET
Optimized for high-frequency switching applications
Product Features and Performance
High switching speed
Low on-state resistance (RDS(on))
Low gate charge (Qg)
High power handling capability
Product Advantages
Efficient power conversion
Improved thermal management
Reliable performance
Key Technical Parameters
Drain-Source Voltage (VDS): 55V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 70mΩ
Continuous Drain Current (ID): 17A
Input Capacitance (Ciss): 370pF
Power Dissipation (Pd): 45W
Quality and Safety Features
Compliant with RoHS3 directive
Housed in the reliable TO-220AB package
Compatibility
Suitable for high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
Excellent switching performance and efficiency
Robust and reliable design
Versatile application capabilities
Competitive pricing and availability