Manufacturer Part Number
IRFU3910PBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with low on-resistance
Product Features and Performance
Extremely low on-resistance for high efficiency
Fast switching speed for high-frequency applications
High power density and reliability
Suitable for a wide range of power conversion and motor control applications
Product Advantages
Excellent thermal performance
Low gate charge for efficient switching
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 115mΩ @ 10A, 10V
Continuous Drain Current (Id): 16A @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable HEXFET technology
Rigorous quality control and testing
Compatibility
Suitable for a variety of power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Industrial and consumer electronics
Product Lifecycle
This product is actively available and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Fast switching speed for high-frequency applications
Robust design for reliable operation in diverse environments
Proven HEXFET technology from a reputable manufacturer
Wide range of applications and compatibility
