Manufacturer Part Number
IRFU3607PBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Low on-resistance for high efficiency
High current capability
Fast switching speed
Rugged and reliable design
Product Advantages
Excellent thermal performance
Optimized for high-frequency switching
Suitable for a wide range of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20 V
On-resistance (Rds(on)): 9 mΩ @ 46 A, 10 V
Continuous Drain Current (Id): 56 A @ 25°C
Input Capacitance (Ciss): 3070 pF @ 50 V
Power Dissipation (Max): 140 W
Quality and Safety Features
RoHS3 compliant
Robust HEXFET technology
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Currently available
No information on discontinuation
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved system performance
Robust design for reliability in demanding applications
Optimized for high-frequency switching for increased power density
Wide operating temperature range (-55°C to 175°C)
Versatile compatibility with various power electronics applications
IRFU3518-701PBFInfineon TechnologiesMOSFET N-CH 80V 38A IPAK