IRFU024NPBF - Infineon Technologies

Manufacturer Part Number

IRFU024NPBF

Manufacturer

Infineon Technologies

Introduction

N-Channel MOSFET

Product Features and Performance

Drain to Source Voltage (Vdss): 55 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 75 mOhm @ 10 A, 10 V

Current Continuous Drain (Id) @ 25°C: 17 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V

Power Dissipation (Max): 45 W (Tc)

Vgs(th) (Max) @ Id: 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 10 V

Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V

Product Advantages

Low on-resistance

High current handling capability

Compact through-hole package

Key Technical Parameters

N-Channel MOSFET

55 V Drain to Source Voltage

17 A Continuous Drain Current

75 mOhm On-Resistance

-55°C to 175°C Operating Temperature

Quality and Safety Features

RoHS3 Compliant

IPAK (TO-251AA) Package

Compatibility

Through-Hole Mounting

Application Areas

Power Supplies

Motor Drives

Industrial Electronics

Automotive Electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power conversion

Compact through-hole package for easy integration

Wide operating temperature range for versatile applications

RoHS3 compliance for environmental friendliness