Manufacturer Part Number
IRFTS9342TRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete power MOSFET transistor
Part of the HEXFET series
Surface mount package
Product Features and Performance
P-channel MOSFET design
30V drain-source voltage
8A continuous drain current
40mΩ maximum on-resistance
595pF maximum input capacitance
2W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact surface mount package
Key Technical Parameters
Vdss: 30V
Vgs(max): ±20V
Rds(on)(max): 40mΩ @ 5.8A, 10V
Ciss(max): 595pF @ 25V
Qg(max): 12nC @ 10V
Quality and Safety Features
RoHS3 compliant
MOSFET technology for reliable performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial controls
Product Lifecycle
Current production part
Replacements and upgrades available as technology advances
Key Reasons to Choose this Product
Excellent power handling and efficiency
Compact surface mount package
Wide operating temperature range
Proven HEXFET technology from Infineon