Manufacturer Part Number
IRFR3710ZTRLPBF
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
Product Features and Performance
Drain to Source Voltage (Vdss) of 100V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-state Resistance (Rds(on)) of 18mΩ @ 33A, 10V
Continuous Drain Current (Id) of 42A at 25°C (Tc)
Input Capacitance (Ciss) of 2930pF @ 25V
Maximum Power Dissipation of 140W at 25°C (Tc)
Operating Temperature Range of -55°C to 175°C (TJ)
Product Advantages
High current handling capability
Low on-state resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
N-Channel MOSFET
Vds: 100V
Vgs(th): 4V @ 250A
Drive Voltage: 10V
Gate Charge (Qg): 100nC @ 10V
Quality and Safety Features
RoHS3 compliant
D-Pak (TO-252-3) package
Compatibility
Surface mount package
Suitable for a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switchmode power supplies
Inverters
General power switching applications
Product Lifecycle
This product is an active and widely available part. Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
High current handling capability
Low on-state resistance for efficient power switching
Wide operating temperature range
Compact and thermally efficient D-Pak package
RoHS3 compliance for environmental sustainability