IRFR2405TRLPBF - Infineon Technologies

Manufacturer Part Number

IRFR2405TRLPBF

Manufacturer

Infineon Technologies

Introduction

HEXFET N-Channel Power MOSFET

Product Features and Performance

Optimized for high-frequency, high-power switching applications

Low on-resistance and fast switching speeds

Excellent thermal characteristics

Product Advantages

High power density

High efficiency

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 55V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V

Continuous Drain Current (Id) @ 25°C: 56A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V

Power Dissipation (Max): 110W (Tc)

Vgs(th) (Max) @ Id: 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V

Quality and Safety Features

RoHS3 compliant

Operating Temperature: -55°C ~ 175°C (TJ)

Compatibility

Suitable for surface mount applications

Application Areas

High-frequency, high-power switching applications

Power supplies

Motor drives

Inverters

Converters

Product Lifecycle

Current product, no discontinuation or replacement plans

Key Reasons to Choose This Product

High power density and efficiency

Reliable performance and thermal characteristics

Optimized for high-frequency, high-power switching applications

RoHS3 compliance for environmentally-friendly use