Manufacturer Part Number
IRFP4229PBF
Manufacturer
Infineon Technologies
Introduction
The IRFP4229PBF is a high-performance N-channel MOSFET transistor suitable for various power electronics applications.
Product Features and Performance
250V drain-to-source voltage rating
Low on-resistance of 46mΩ
High continuous drain current of 44A at 25°C
Wide operating temperature range of -40°C to 175°C
Low input capacitance of 4560pF
High power dissipation capability of 310W
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliability in demanding applications
Proven HEXFET technology from Infineon
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 46mΩ @ 26A, 10V
Continuous Drain Current (Id): 44A @ 25°C
Input Capacitance (Ciss): 4560pF @ 25V
Power Dissipation (Pd): 310W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-247AC package for reliable operation
Compatibility
This MOSFET is compatible with various power electronics circuits and applications.
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Renewable energy systems
Product Lifecycle
The IRFP4229PBF is an active product, and Infineon continues to support it. Replacement or upgrade options may be available if required.
Key Reasons to Choose This Product
High efficiency and performance for power electronics
Robust and reliable design for demanding applications
Proven HEXFET technology from a trusted manufacturer
Wide range of compatibility and suitability for various applications