IRFP3710PBF - Infineon Technologies

Manufacturer Part Number

IRFP3710PBF

Manufacturer

Infineon Technologies

Introduction

The IRFP3710PBF is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics applications.

Product Features and Performance

100V Drain to Source Voltage (Vdss)

25mOhm Maximum On-Resistance (Rds(on)) at 28A, 10V

57A Continuous Drain Current (Id) at 25°C

3000pF Maximum Input Capacitance (Ciss) at 25V

200W Maximum Power Dissipation at 25°C

Wide Operating Temperature Range: -55°C to 175°C

Product Advantages

High-efficiency power switching performance

Low on-resistance for low conduction losses

High current handling capability

Robust design for reliable operation

Key Technical Parameters

N-Channel MOSFET

HEXFET Series

TO-247-3 Package

±20V Maximum Gate-Source Voltage (Vgs)

4V Maximum Gate Threshold Voltage (Vgs(th)) at 250A

Quality and Safety Features

RoHS3 Compliant

Reliable through-hole mounting

Compatibility

Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.

Application Areas

Power converters and inverters

Motor drives

Switching power supplies

Industrial control systems

Product Lifecycle

This product is an active and widely used N-channel MOSFET from Infineon Technologies.

Replacement or upgraded models may become available in the future, but the IRFP3710PBF remains a popular and reliable choice.

Key Reasons to Choose This Product

Excellent power switching performance with low on-resistance

High current handling and power dissipation capabilities

Wide operating temperature range for demanding applications

Robust and reliable design for long-term use

RoHS3 compliance for environmentally-friendly applications

Compatibility with a wide range of power electronics systems