IRFP250MPBF - Infineon Technologies

Manufacturer Part Number

IRFP250MPBF

Manufacturer

Infineon Technologies

Introduction

High-performance power MOSFET transistor

Suitable for a variety of power conversion and control applications

Product Features and Performance

High drain-source voltage rating of 200V

Low on-resistance of 75mΩ at 18A, 10V

High continuous drain current of 30A at 25°C

Wide operating temperature range of -55°C to 175°C

Low input capacitance of 2159pF at 25V

Maximum power dissipation of 214W at 25°C

Product Advantages

Efficient power switching and control

Compact and robust design

Reliable operation across a wide temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 200V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 75mΩ

Continuous Drain Current (Id): 30A

Input Capacitance (Ciss): 2159pF

Power Dissipation (Ptot): 214W

Quality and Safety Features

RoHS3 compliant

Manufactured in a controlled environment to ensure quality and reliability

Compatibility

TO-247-3 package

Suitable for a wide range of power electronics applications

Application Areas

Power converters

Motor drives

Inverters

Switching power supplies

Product Lifecycle

This product is an actively supported and widely used power MOSFET

Replacement or upgrade options may be available from Infineon Technologies or other manufacturers

Key Reasons to Choose This Product

High-performance power handling capabilities

Efficient and reliable operation

Compact and robust design

Wide temperature range and RoHS3 compliance

Suitability for a broad range of power electronics applications