Manufacturer Part Number
IRFML8244TRPBF
Manufacturer
Infineon Technologies
Introduction
N-Channel MOSFET transistor
Part of the HEXFET series
Product Features and Performance
Drain to Source Voltage (Vdss) of 25V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 24mΩ at 5.8A, 10V
Continuous Drain Current (Id) of 5.8A at 25°C
Input Capacitance (Ciss) of 430pF at 10V
Maximum Power Dissipation of 1.25W at 25°C
Operating Temperature Range of -55°C to 150°C
Product Advantages
Low on-state resistance for efficient power conversion
Compact SOT-23 surface mount package
MOSFET technology for fast switching and low power loss
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage (Vgs(th)) of 2.35V at 10A
Gate Charge (Qg) of 5.4nC at 10V
Quality and Safety Features
RoHS3 compliant
Halogen-free
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Efficient power handling capabilities
Reliable and robust MOSFET design
Compliance with industry standards
