IRFL4105 - Infineon Technologies

Manufacturer Part Number

IRFL4105

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistor FET, MOSFET Single

Product Features and Performance

N-Channel MOSFET

Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) Technology

Operating Temperature Range: -55°C to 150°C

Drain to Source Voltage (Vdss): 55V

Gate to Source Voltage (Vgs) (Max): ±20V

Drain to Source On-Resistance (Rds(on)) (Max): 45mΩ @ 3.7A, 10V

Continuous Drain Current (Id) (Max): 3.7A @ 25°C

Input Capacitance (Ciss) (Max): 660pF @ 25V

Power Dissipation (Max): 1W

Product Advantages

Efficient power switching and control

Compact surface mount package

Reliable operation over wide temperature range

Key Technical Parameters

Package: TO-261-4, TO-261AA (SOT-223)

Series: HEXFET

Packaging: Tube

Threshold Voltage (Vgs(th)) (Max): 4V @ 250A

Gate Charge (Qg) (Max): 35nC @ 10V

Drive Voltage (Max Rds(on), Min Rds(on)): 10V

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount application

Application Areas

Power switching and control

Motor control

Switching power supplies

Automotive electronics

Product Lifecycle

Currently available

No information on discontinuation or upgrades

Key Reasons to Choose This Product

Efficient power switching performance

Reliable operation over wide temperature range

Compact surface mount package for space-constrained designs

Proven HEXFET technology from Infineon