Manufacturer Part Number
IRFHS8342TRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Suitable for power switching applications
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low on-state resistance (RDS(on)) of 16 mΩ
High current handling capability: 8.8A continuous drain current (Ta), 19A (Tc)
Fast switching speed and low gate charge (Qg) of 8.7 nC
Compact 6-pin PowerVDFN package
Product Advantages
Excellent thermal and electrical performance
Efficient power conversion and energy savings
Compact and space-saving design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
Input Capacitance (Ciss): 600 pF
Power Dissipation: 2.1W (Ta)
Gate Threshold Voltage (VGS(th)): 2.35V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount design for easy PCB integration
Application Areas
Power supplies
Motor drives
Industrial automation
Lighting and appliance control
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
High efficiency and performance
Compact and space-saving design
Reliable and durable construction
Suitable for a wide range of power applications
